Superconducting digital logic is a beyond-CMOS alternative due to its high computational efficiency, small form factor and ultra-low power consumption. Superconducting NbTiN material compares favorably to earlier Nb and NbN due to higher critical temperature (Tc), higher thermal stability, and lower degradation risk during fabrication processing. Here we summarize our recent NbTiN material and process characterization for integrated circuit interconnects. Different NbTiN depositions via co-sputtering of Nb and Ti target or sputtering of a single NbTi target, and different film thicknesses of 7-200nm were deposited on 300mm Si wafers. Unpatterned films were characterized at room temperature with XRD, XRR, AFM, and sheet resistance measurements; and at cryo temperature with measurement of Tc, critical current density (Jc), and London penetration depth. Patterned structures including lines, meanders, and hall bars, with critical dimension down to 50nm were fabricated using 193nm immersion lithography and reactive ion etching (RIE) on the imec pilot line. We show how film properties including roughness of 0.2-3.9nm, room temperature resistivity of 100-460 µΩcm, and varied ratios of (111) and (200) crystal phases affect the superconducting performance of the patterned structures, which exhibit Tc up to 15K and Jc up to 120 mA/µm2.