In this work, we present recent progress on the semi-damascene integration to fabricate NbTiN based two-metal level αSi/NbTiN based Josephson junctions (JJs), NbTiN/HZO/NbTiN tunable Metal-Insulator-Metal (MIM) capacitors and NbTiN BEOL interconnects, that are the key building blocks for scalable Superconducting Digital (SCD) technology. Morphological characterization shows the fabricated devices are high-quality with critical dimensions (CDs) down to 50 nm. Room and cryogenic electrical measurements demonstrate amorphous Si (αSi) based JJs have Jc> 2 mΑ/µm2, with a IcRn of ~1.1 mV. The HZO MIM capacitors are tunable at high frequency upto 4 GHz with high specific capacitance Cf of 28 fF/µm2 and k-value of 30, and NbTiN BEOL interconnects have critical temperature Tc >14.5 K and high critical current density Jc >120 mΑ/µm2. The devices were fabricated on 300 mm wafers with temperature budget of 420 oC using tools and processes compatible with standard CMOS technology, providing groundwork towards enabling industrial fabrication of high-density digital stacks for high-speed and energy-efficient computing.