Hybrid superconductor–semiconductor (S–Sm) junctions are vital building blocks for next-generation quantum processors, offering stability, reproducibility, scalability, and electrostatic control. This talk presents voltage-tunable S–Sm devices integrated with Nb superconducting electronics, where split-gate-induced electrostatic fields enable nanoscale switching of conductance. We demonstrate the experimental realization of large-scale, gate-controllable field-effect quantum chips and introduce superconducting quantum point contact transistors (SQPC) arrays fabricated using split-gate technology. Emphasis will be placed on the switching properties and microwave spectroscopy of these hybrid devices, highlighting their relevance for scalable, addressable, power-efficient cryogenic electronic quantum circuit architectures.